Company profile
Yangjie Technology is an integrated device manufacturer of power semiconductors; its SiC chip line and automotive-grade power-module packaging project have entered production.
Products
Small-Signal Switching Diode
A series of compact surface-mount switching diodes offering fast switching speed and low leakage current across multiple variants.
Package:SOD-323/SOD-523/SOT-23; Rated current:100 mA; Reverse voltage:75 V; Reverse recovery time:4 ns; Junction temp. range:-55℃~+150℃; Junction capacitance:1.5 pF
- Consumer electronics
- Smart home
- Communications
- Industrial control
Small-Signal Schottky Diode
Compact Schottky barrier diodes featuring low forward voltage drop and fast response characteristics.
Forward voltage drop:0.35 V; Reverse recovery time:5 ns; Package:SOD-323/SOT-23; Rated current:200 mA; Reverse voltage:40 V; Junction temp. range:-55℃~+125℃
- Consumer electronics
- Power supply
- Communications
- Smart home
Small-Signal Zener Diode
Compact Zener voltage-regulator diode series used for voltage reference and overvoltage protection.
Zener voltage:2.4 V~43 V; Package:SOT-23/SOD-323; Rated current:200 mA; Junction temp. range:-55℃~+150℃; Junction capacitance:50 pF
- Consumer electronics
- Industrial control
- Communications
- Power supply
Small-Signal Transistor
Low-power NPN/PNP bipolar transistors for signal amplification and switching.
Channel type:NPN/PNP; Package:SOT-23; Rated current:500 mA; Reverse voltage:50 V; Junction temp. range:-55℃~+150℃; Switching frequency:200 MHz
- Consumer electronics
- Smart home
- Communications
- Industrial control
Rectifier Diode
The rectifier diode and bridge series convert alternating current into direct current, offering a full range of reverse-voltage and current ratings from low to high voltage and small to large current. Widely used in power supplies, industrial control and home appliances, it is a fundamental rectification component in power conversion.
Type standard rectifier diode/bridge; reverse voltage 50–1200V; forward current 1–50A; package DO-201/TO-220/GBU; junction temperature −55℃~150℃; recovery standard rectification.
- Power supply
- Industrial control
- Home appliances
- New energy
Fast Recovery Diode
Fast Recovery Diode (FRD) series featuring short reverse recovery time.
Reverse recovery time:35 ns; Reverse voltage:600 V; Rated current:3 A; Reverse recovery charge:30 nC; Junction temp. range:-55℃~+175℃; Package:TO-220/TO-252
- Switching power supply
- PV inverter
- Industrial frequency conversion
- Charging pile
Schottky Diode
Schottky barrier diode series with low VF and excellent high-frequency performance.
Forward voltage drop:0.55 V; Reverse voltage:100 V; Rated current:5 A; Junction temp. range:-55℃~+175℃; Package:TO-220/TO-252; Junction capacitance:200 pF
- Power supply
- Photovoltaics
- Consumer electronics
- Industrial control
Transient Voltage Suppressor Diode
Transient Voltage Suppressor (TVS) diodes for surge and transient overvoltage protection.
Breakdown voltage:12 V~400 V; Clamp voltage:19 V~650 V; Power grade:400 W/600 W/1500 W; Junction temp. range:-55℃~+150℃; Junction capacitance:500 pF
- Automotive electronics
- Communications
- Industrial control
- Consumer electronics
ESD Protection Diode
Electrostatic Discharge (ESD) protection diodes for interface and port protection.
ESD protection:IEC61000-4-2; Junction capacitance:0.5 pF; Reverse voltage:5 V; Rated current:2 A; Junction temp. range:-55℃~+125℃; Package:SOD-523/DFN1006
- Consumer electronics
- Communications
- Automotive electronics
- Smart home
Thyristor Surge Protector
Thyristor-type surge protection device (TSP) for lightning and transient surge protection.
Breakover voltage:50 V~300 V; Surge current:100 A~500 A; Response time:<1 µs; Operating temperature:-40℃~+125℃; Material:Si
- Communications
- Industrial control
- Power supply
- Consumer electronics
Silicon-Controlled Rectifier
Silicon-Controlled Rectifier (SCR) product series, including unidirectional SCR and bidirectional TRIAC.
Channel type:SCR/TRIAC; Reverse voltage:600 V~1200 V; Rated current:10 A~40 A; Operating temperature:-40℃~+125℃; Process:Thyristor
- Home appliances
- Industrial control
- Lighting
- Power supply
Automotive Protection Devices
Automotive-grade protection device series, including TVS and ESD devices for automotive electronics.
Certification:AEC-Q101; Breakdown voltage:12 V~58 V; Clamp voltage:19 V~94 V; ESD protection:IEC61000-4-2; Protection grade:IP67; Operating temperature:-40℃~+150℃
- New energy vehicle
- Automotive electronics
- Vehicle electronic control
- Three-electric system
Power Transistor
The power transistor is a medium- to high-power bipolar device used for power switching, linear regulation and signal amplification. Housed in TO-series packages, it reliably performs power-driving duties in industrial control, power supplies and home appliances.
Type NPN/PNP bipolar; package TO-126/TO-220/TO-3P; collector current 1–15A; voltage rating 40–400V; power dissipation 2–100W; junction temperature −55℃~150℃.
- Industrial control
- Power supply
- Home appliances
- Automotive electronics
Small-Signal Digital Transistor
The small-signal digital transistor (DTC) integrates a bias resistor inside the chip, connects directly to a microcontroller and removes external resistors to simplify circuit design. Used for switching control and level shifting, it fits compact consumer, communication and industrial applications.
Built-in resistor pre-biased; package SOT-23/SOT-323; drive switching/level shift; voltage rating 50V; collector current 100mA; power dissipation 200mW.
- Consumer electronics
- Smart home
- Industrial control
- Communications
Power Zener Diode
The power Zener diode is a high-power Zener regulator that supplies a stable reference voltage to a power source and clamps overvoltage during faults to protect downstream circuits. It suits industrial and automotive scenarios such as supply regulation, reference voltage and overvoltage protection.
Type high-power Zener; regulated voltage 3.3–100V; package DO-41/DO-15/TO-220; power dissipation 1–5W; tolerance ±5%; junction temperature −55℃~150℃.
- Power supply
- Industrial control
- Automotive electronics
- Home appliances
General-Purpose MOSFET
General-purpose MOSFET product series covering trench and super-junction process structures, among others.
Channel type:N/P-channel; Rated voltage:20 V~1000 V; Rated current:0.1 A~100 A; On-resistance:5 mΩ~100 mΩ; Package:SOT/TO/PDFN/DFN/TOLL; Process:Trench/SJ
- Power supply
- Industrial control
- PV energy storage
- Consumer electronics
- Communications
Automotive N-Channel MOSFET
Automotive-grade N-channel MOSFET series meeting automotive electronics reliability standards.
Certification:AEC-Q101; Channel type:N-channel; Rated voltage:40 V~1200 V; Rated current:30 A~300 A; On-resistance:2 mΩ~20 mΩ; Bus voltage:800 V; Operating temperature:-55℃~+175℃
- New energy vehicle
- On-board charger (OBC)
- Motor controller
- Battery management
- DC-DC
Automotive P-Channel MOSFET
Automotive-grade P-channel MOSFET series suited for load switching and battery management.
Certification:AEC-Q101; Channel type:P-channel; Rated voltage:-30 V~-100 V; Rated current:10 A~60 A; On-resistance:5 mΩ~40 mΩ; Operating temperature:-55℃~+175℃
- New energy vehicle
- Battery management
- Load switch
- Vehicle electronic control
Automotive N+P MOSFET
The automotive-grade N+P complementary MOSFET family combines N- and P-channel devices in one package, dedicated to half-bridge topologies such as H-bridges and motor drives while meeting automotive reliability needs. It delivers efficient, compact power-switching for vehicle control, motor driving and power-path management.
Type N+P complementary MOSFET; certification AEC-Q101; package PDFN/TO; on-resistance down to few mΩ; voltage 30–100V; used in H-bridge/motor drive/half-bridge.
- New energy vehicle
- Motor drive
- H-bridge circuit
- Vehicle electronic control
Automotive SiC Schottky Diode
Automotive-grade silicon-carbide Schottky diode (SiC SBD) series with high-temperature tolerance and low reverse recovery.
Certification:AEC-Q101; Forward voltage drop:1.2 V~1.7 V; Reverse voltage:650 V~1200 V; Reverse recovery charge:15 nC~50 nC; Junction temp. range:-55℃~+175℃; Rated current:10 A~50 A
- New energy vehicle
- On-board charger (OBC)
- DC-DC converter
- Charging pile
Automotive SiC MOSFET
Automotive-grade silicon-carbide MOSFET series with high voltage and low loss for main drive and OBC.
Certification:AEC-Q101; Rated voltage:650 V~1200 V; On-resistance:8 mΩ~40 mΩ; Bus voltage:800 V; Switching frequency:100 kHz~300 kHz; Junction temp. range:-55℃~+175℃
- New energy vehicle
- Main drive inverter
- On-board charger (OBC)
- High-voltage DC-DC
Automotive IGBT
Automotive-grade discrete IGBT series developed on a micro-trench field-stop process platform.
Certification:AEC-Q101; Rated voltage:650 V/1200 V; Rated current:25 A~75 A; Saturation voltage:1.5 V~1.9 V; Junction temp. range:-55℃~+175℃; Package:TO-247-3L/TO-247-4L
- New energy vehicle
- Automotive PTC heater
- Motor control
- Vehicle power supply
- Three-electric system
Wafer
Semiconductor discrete-device chip (wafer) products covering silicon-based and silicon-carbide chips.
Wafer size:4/5/6/8 in (Si), 6 in (SiC); Material:Si/SiC; Process:Trench/SJ/Epi; Substrate:Cu/ceramic
- Discrete device manufacturing
- Power semiconductors
- New energy vehicle
- PV energy storage
- Industry
Integrated Circuits
The integrated-circuit (IC) product line covers power-management and control devices, giving systems core functions such as power conversion, driving and protection. Serving consumer electronics, industrial control, automotive and power supplies, it is the company's key step from discrete devices toward system integration.
Type power-management/control IC; functions power conversion/drive/protection; process standard CMOS/BCD; package SOP/QFN/DFN; applications consumer/industrial/automotive/power.
- Consumer electronics
- Industrial control
- Automotive electronics
- Power supply
Power Module
Power module products covering IGBT modules and SiC power modules, including industrial and automotive grades.
Rated voltage:650 V~1700 V; Topology:Half-bridge/T-type 3L/Boost; Substrate:DBC Cu substrate; Package:Easy/C1/C2/E1/E2/P2/P3; Material:Cu/ceramic; Operating temperature:-40℃~+150℃
- Industrial frequency conversion
- Servo drive
- PV energy storage
- Charging pile
- New energy vehicle
Flat-Type Discrete Devices
The flat and press-pack high-power discrete devices target medium- to high-voltage, high-current power-conversion scenarios, using face-contact construction for lower contact thermal resistance and higher reliability. They are widely used where high power density is needed, such as industrial drives, power electronics and new energy.
Structure flat/press-pack; type thyristor/diode module; voltage 600–6500V; current 100–5000A; cooling air/water; applications industrial drive/power electronics/new energy.
- Industrial frequency conversion
- Power electronics
- New energy
- Power supply
Production evidence
MfrProof public-source record: Yangjie Technology is an integrated device manufacturer of power semiconductors; its SiC chip line and automotive-grade power-module packaging project have entered production. Manufacturer status passed editorial source review.
This profile is based on confirmed public information. It is not an audit, certification or commercial endorsement.
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