StarPower Semiconductor Ltd.

StarPower 650V IGBT power modules span a broad current range from 10A to over 800A and provide topologies including half-bridge, chopper, PIM, sixpack, three-level I-NPC and single switch. They use Planar NPT and Trench-FS Gen1/Gen2/Gen3 chips with VCE(sat) as low as 1.30V to 1.50V, balancing high efficiency and reliability. Packages include flat-base, PINFIN base, molded and standard types (C2/C5/C6/F1/L2/L4/L6/P3/P4). They suit industrial drives, renewable energy and automotive air conditioning, and pass stringent reliability validation.

Voltage class: 650V; Current: 10A to over 800A; Chip: Planar NPT / Trench-FS Gen1/Gen2/Gen3; Topology: half-bridge, chopper, PIM, sixpack, 3-level I-NPC, single; VCE(sat): 1.30V to 1.50V (typ); Package: flat-base / P3/P4 (PINFIN) / C2/C5/C6/F1/L2/L4/L6; Automotive use recommended with AQG-324 (per datasheet).

• Automotive air-conditioning and compressor drive
• Industrial inverter and servo drive
• PV inverter and energy-storage conversion
• Power supply and UPS

StarPower 750V IGBT power modules target higher bus-voltage applications, giving extra voltage margin and system safety over the 650V platform. They offer half-bridge, chopper, PIM, sixpack and three-level topologies for hybrid and BEV main inverters and on-board chargers. Trench-FS field-stop chips provide low conduction loss and optimized switching. Packages cover flat-base and PINFIN cooling bases.

Voltage class: 750V; Current: 10A to several hundred A (per model); Chip: Trench-FS Gen1/Gen2/Gen3; Topology: half-bridge/chopper/PIM/sixpack/3-level; VCE(sat): about 1.4V to 1.7V (typ); Package: flat-base / PINFIN base; Automotive traction recommended with AQG-324.

• NEV main traction inverter
• On-board charger OBC and DCDC
• Industrial inverter and servo
• Energy storage and PV inverter

StarPower 1000V IGBT power modules serve medium-high voltage bus systems, giving higher blocking-voltage margin for traction inverters and high-voltage DCDC. They continue Trench-FS field-stop technology, balancing low conduction loss and good short-circuit ruggedness. Topologies include half-bridge, chopper, PIM and sixpack for efficiency- and reliability-critical systems. High-thermal flat-base and PINFIN packages are used.

Voltage class: 1000V; Current: tens to several hundred A (per model); Chip: Trench-FS Gen1/Gen2/Gen3; Topology: half-bridge/chopper/PIM/sixpack; VCE(sat): about 1.5V to 1.8V (typ); Package: flat-base / PINFIN base; Automotive use recommended with AQG-324.

• NEV high-voltage traction inverter
• High-voltage DCDC converter
• Industrial medium-voltage drive
• Wind/solar/storage conversion

StarPower 1200V IGBT power modules are the richest family, covering 10A to 900A and full topologies of single, half-bridge, chopper, PIM, four-pack, sixpack, 3-level I-NPC and common emitter. Chips range from Planar NPT to Trench-FS Gen3, with C6.1/C6 using Gen3 for ultra-low VCE(sat) of 1.35V to 1.40V and excellent power cycling. Packages include A3 flat, C1/C2/C2.1/C5/C6/C6.1/C8/L2, serving NEV traction, charging piles and industrial conversion.

Voltage class: 1200V; Current: 10A to 900A; Chip: Planar NPT / Trench-FS Gen1/Gen2/Gen3; Topology: single/half-bridge/chopper/PIM/4-pack/sixpack/3-level I-NPC/common emitter; VCE(sat): 1.35V (Gen3 C6.1) to 3.10V (Planar NPT); Package: A3/C1/C2/C2.1/C5/C6/C6.1/C8/L2; Automotive traction recommended with AQG-324.

• NEV main traction inverter
• DC fast-charging power module
• Industrial inverter and servo drive
• PV and energy-storage converter

StarPower 1700V IGBT power modules target higher bus voltage and stronger short-circuit ruggedness, such as rail traction auxiliaries, wind conversion and industrial medium-voltage drives. They use high-voltage Trench-FS chips that keep low conduction loss and reliable switching at 1700V blocking voltage. Topologies are mainly half-bridge, chopper and PIM, with high-thermal flat-base packages for long power-cycling life.

Voltage class: 1700V; Current: tens to several hundred A (per model); Chip: Trench-FS Gen1/Gen2/Gen3; Topology: half-bridge/chopper/PIM; VCE(sat): about 1.7V to 2.0V (typ); Package: high-thermal flat-base; Industrial-grade high reliability, rail/wind recommended with industry certification.

• Rail traction and auxiliary converter
• Wind-power converter
• Industrial medium-voltage inverter
• High-voltage DC power supply

StarPower 750V SiC power modules are based on SiC MOSFET chips for EVs and traction inverters at 800V and lower bus voltages, offering lower switching loss and higher junction temperature than same-voltage IGBT. They cover sixpack, half-bridge and single topologies and support high switching frequency to shrink passive components. Low-inductance packages and high blocking voltage suit efficiency- and density-focused NEVs.

Voltage class: 750V; Chip: SiC MOSFET; Topology: sixpack/half-bridge/single; RDS(on): milliohm level (per model); Features: low switching loss, high blocking voltage, high Tj (above 175C); Package: PINFIN base / low-inductance; Automotive use recommended with AQG-324.

• 800V-platform NEV traction inverter
• On-board charger OBC
• High-voltage DCDC converter
• High-efficiency industrial power

StarPower 1200V SiC power modules are core devices for NEV drivetrains, covering half-bridge (N4), sixpack (P6) and single (T6) topologies. They use low-inductance design to avoid oscillation, with AMB insulation substrate and PINFIN cooling base for excellent thermal and mechanical robustness. RDS(on) is as low as 2.15mOhm to 2.90mOhm (P6 sixpack) and 8.80mOhm (T6 single), enabling high frequency and high power density.

Voltage class: 1200V; Chip: SiC MOSFET; Topology: half-bridge (N4) / sixpack (P6) / single (T6); RDS(on): 2.15mOhm to 2.90mOhm (sixpack), 8.80mOhm to 8.86mOhm (single); Package: N4 molded+PINFIN / P6 (PINFIN/Pressfit/long lead) / T6 (T-Pack or molded); Features: low-inductance, AMB substrate, high Tj; Automotive use with AQG-324.

• NEV main traction inverter
• DC fast and ultra-fast charging module
• On-board charger and high-voltage DCDC
• Industrial high-frequency power and servo

StarPower IPM is a highly integrated, low-power, high-reliability intelligent power module with built-in HVIC and LVIC drivers offering under-voltage, over-current, over-temperature and temperature-output protection. It covers 600V/650V platforms at 5A to 50A in molded U1/U2/U3/U5 packages, compact and easy to mount. Target applications include industrial inverters, home appliances and automotive air conditioning.

Voltage class: 600V/650V; Current: 5A to 50A; Topology: sixpack; Chip: Trench-FS Gen1; VCE(sat): 1.50V to 1.75V (typ); Package: U1/U2/U3/U5 molded; Protection: UV/OC/OT/temperature output; Use: inverter, A/C, automotive A/C.

• NEV cabin A/C compressor drive
• Residential and commercial inverter A/C
• Industrial inverter and servo
• Low-power motor drive

StarPower 650V power discrete devices deliver single IGBT and SiC devices in TO-247 style packages for automotive inverter, appliances, PV and industrial drives. Operating frequency spans 50Hz to 50kHz with current from 10A to 160A, balancing efficiency and reliability. The discrete approach lets customers flexibly compose power loops for low/medium power and auxiliary supplies.

Voltage class: 650V; Current: 10A to 160A; Chip: Trench-FS IGBT / SiC; Package: TO-247-3L / TO-247PLUS-3L / TO-247PLUS-4L; Frequency: 50Hz to 50kHz; Features: high reliability, high performance; Use: automotive inverter, appliance, PV, industrial drive.

• Automotive auxiliary inverter and DCDC
• Appliance variable-frequency control
• PV micro-inverter and optimizer
• Industrial power and auxiliary supply

StarPower 750V power discrete devices offer higher voltage margin over the 650V platform for 800V-bus auxiliary supplies and OBC front stages. They use Trench-FS IGBT and SiC chips mainly in TO-247 families for automated assembly. The series combines low conduction loss and good switching, meeting automotive reliability and lifetime requirements.

Voltage class: 750V; Current: 10A to 160A; Chip: Trench-FS IGBT / SiC; Package: TO-247-3L / TO-247PLUS-3L / TO-247PLUS-4L; Frequency: 50Hz to 50kHz; Features: high reliability, low loss; Automotive use recommended with automotive-grade certification.

• OBC front stage
• 800V-platform auxiliary supply
• Industrial and telecom power
• PV and energy storage

StarPower 1200V power discrete devices cover single IGBT and SiC MOSFET in T2 packages (TO-247-3L and TO-247PLUS-3L/4L), with current from 10A to over 140A. IGBT singles show VCE(sat) of 1.25V to 1.95V, while SiC singles reach RDS(on) as low as 17.0mOhm (DM170S12), supporting high frequency and high junction temperature. They are widely used in automotive auxiliary stages, industrial power and efficient conversion.

Voltage class: 1200V; Current: 10A to over 140A; Chip: Trench-FS Gen1/Gen2 IGBT and SiC MOSFET; Package: T2 (TO-247-3L / TO-247PLUS-3L / TO-247PLUS-4L); IGBT VCE(sat): 1.25V to 1.95V (typ); SiC RDS(on): 17.0mOhm (DM170S12); Frequency: high; Use: automotive inverter, industrial power, efficient supply.

• NEV auxiliary supply and DCDC
• Industrial high-frequency SMPS
• PV and storage conversion
• Motor drive and servo

StarPower diode modules complement IGBT/SiC power modules, providing the power-diode combinations needed for freewheeling, rectification and braking circuits. They cover multiple voltage and current classes and pair flexibly with half-bridge, chopper and PIM topologies. High-reliability packages and high-thermal substrates meet the reverse-recovery and thermal demands of industrial drives, renewable energy and traction.

Voltage class: 600V to 1700V (per model); Current: multiple ratings (per model); Type: power rectifier / freewheel diode module; Package: flat-base / standard power module; Features: low reverse recovery, high reliability; Use: with IGBT/SiC modules for inverter and drive.

• Industrial inverter freewheeling and rectification
• Renewable inverter and conversion
• Motor drive and braking unit
• Power supply and UPS

The L6 IGBT module is StarPower's new module for flexible power topologies, using an array terminal layout that adapts to varying circuit topologies. This structure lets customers realize half-bridge, three-level or custom topologies in one package, increasing design freedom. It balances high power density and good cooling, suited to NEV and industrial conversion needing topology flexibility.

Series: L6 IGBT module; Feature: flexible array terminal layout for varying topologies; Voltage: 650V/1200V (per model); Package: L6 (flat-base); Features: high power density, good cooling; Use: NEV, industrial conversion (per datasheet).

• NEV multi-in-one drivetrain
• Industrial flexible-topology converter
• Energy storage and PV system
• Customized power unit

The P6 IGBT module is StarPower's new high-power-density module with high-thermal-conductivity, high-reliability HPS and AMB insulation substrates inside. This markedly improves cooling and power-cycling life, fitting NEV traction and high-power conversion. The P6 package is already mass-used in SiC sixpack modules, and the IGBT version continues the same low-thermal-resistance platform.

Series: P6 IGBT module; Feature: high-thermal HPS and AMB insulation substrate; Voltage: 650V/1200V (per model); Package: P6 (PINFIN/Pressfit/long lead); Features: high cooling, high power-cycling life; Use: NEV traction, high-power conversion (per datasheet).

• NEV main traction inverter
• High-power industrial conversion
• DC fast-charging module
• Energy-storage conversion

The N5 IGBT module is StarPower's new product for high energy-transfer efficiency, using multi-chip parallel design for higher efficiency and better current sharing. Multi-chip parallelism lowers per-chip thermal stress and raises overall power-cycling capability. The series targets NEV traction and high-current conversion.

Series: N5 IGBT module; Feature: multi-chip parallel design for higher efficiency; Voltage: per model (common 1200V platform); Package: N series (per model); Features: high efficiency, good sharing, high power cycling; Use: NEV traction, high-current conversion (per datasheet).

• NEV main traction inverter
• High-current industrial conversion
• DC fast-charging power module
• Energy storage system

The C6.1 IGBT module is StarPower's mature platform with excellent mechanical robustness, superior power-cycling and varied packaging availability. Using Trench-FS Gen3 chips, C6.1 reaches VCE(sat) of 1.35V to 1.40V with half-bridge current up to 750A to 800A, widely used in NEV traction and industrial conversion. It supports flat-base and standard packages for platform design.

Series: C6.1 IGBT module; Feature: excellent mechanical robustness, superior power cycling, varied package availability; Chip: Trench-FS Gen3; Voltage: 650V/1200V; VCE(sat): 1.35V to 1.40V (Gen3, typ); Current: half-bridge up to 750A to 800A; Package: C6.1 (flat-base); Automotive use with AQG-324.

• NEV main traction inverter
• Industrial high-power inverter
• DC fast and ultra-fast charging
• Wind/solar/storage conversion

The P6 SiC module is StarPower's SiC power module for NEV drivetrains, using low-inductance design to avoid oscillation, with AMB insulation substrate and PINFIN cooling base. The sixpack topology (DC1200V, e.g. MD22HTC/MD29HTC) reaches RDS(on) of 2.15mOhm to 2.83mOhm, enabling high frequency and high power density. It is a core device for 800V-platform traction and ultra-fast charging.

Series: P6 SiC module; Feature: low-inductance design, AMB insulation substrate and PINFIN cooling base; Voltage: 1200V; Chip: SiC MOSFET; Topology: sixpack; RDS(on): 2.15mOhm to 2.83mOhm (typ); Package: P6 (PINFIN/Pressfit/long lead); Automotive use with AQG-324.

• 800V-platform NEV traction inverter
• DC ultra-fast and fast charging module
• On-board charger and high-voltage DCDC
• Industrial high-frequency efficient power