SICC

The official website lists this family as '4H conductive silicon carbide single-crystal substrate', marked 4H n-type. According to the website: conductive SiC substrate materials are mostly used for homoepitaxy to fabricate power semiconductor devices, and are widely used in new energy fields represented by electric vehicles as well as photovoltaic and wind power generation. Currently the company's 6- and 8-inch products are stably delivered to global mass-production customers, and the company also has the production capability for 12-inch substrates.

[6-inch] Diameter 150.0mm+0mm/-0.2mm; surface orientation 4° off-axis ±0.5°; primary flat length 47.5mm±1.5mm; primary flat orientation ±1.0°; secondary flat: none; thickness 350.0µm±25.0µm; polytype 4H; conductivity type: n-type. [8-inch] Diameter 200.0mm+0mm/-0.5mm; surface orientation 4° off-axis ±0.5°; primary flat: Notch; Notch orientation ±1°; Notch angle 90°+5°/-1°; Notch depth 1mm+0.25mm/-0mm from edge; secondary flat: none; thickness 350/500.0µm±25.0µm; polytype 4H; conductivity type: n-type. [12-inch] Diameter 300.0mm+0mm/-0.5mm; surface orientation 4° off-axis ±0.5°; primary reference: Notch; secondary flat: none; Notch orientation ±5°; Notch angle 90°+5°/-1°; Notch depth 1mm+0.25mm/-0mm from edge; thickness 750.0µm±25.0µm; polytype 4H; conductivity type: n-type. The website notes that more detailed product information is available from the marketing team; figures for micropipe density, dislocation density and resistivity are not disclosed.

• Power electronics devices: by growing a SiC epitaxial layer on a conductive SiC substrate, SiC homoepitaxial wafers are obtained and further processed into Schottky diodes, MOSFETs, IGBTs and other power devices, applied in new energy vehicles, rail transit and high-power power transmission and transformation
• New energy fields represented by electric vehicles
• Photovoltaic and wind power generation
• High-brightness LED: the small thermal and lattice mismatch between SiC and GaN yields good epitaxial layer quality, and SiC has good thermal and electrical conductivity, offering great advantages in high-power LEDs; LEDs on SiC substrates are bright, energy-efficient and long-lived

The official website lists this family as '4H semi-insulating substrate', marked 4H Semi-Insulating. According to the website: semi-insulating SiC substrates have high resistivity and are commonly used for gallium nitride heteroepitaxy; RF devices represented by HEMT combine the good thermal conductivity of SiC with the high-power RF output of GaN at high frequencies, and are widely used in new-generation communications such as 5G base stations. Semi-insulating SiC substrates also have excellent optical properties, and 12-inch substrates have broad application prospects in AR glasses and other optical and wearable electronics fields. Note: this family targets RF/communication and optical applications, not the substrates used for automotive SiC power devices (which require conductive substrates); it is recorded here accordingly.

[6-inch] Diameter 150.0mm+0mm/-0.2mm; surface orientation {0001}±0.2°; primary flat: Notch; no secondary flat; Notch orientation <1100>±1.0°; Notch depth 1.0mm+0.25mm/-0.00mm from edge; Notch angle 90°+5°/-1°; thickness 500.0µm±25.0µm; conductivity type: semi-insulating. [8-inch] Diameter 200.0mm+0mm/-0.5mm; surface orientation {0001}±0.2°; primary flat: Notch; no secondary flat; Notch orientation <1100>±1.0°; Notch depth 1.0mm+0.25mm/-0.00mm from edge; Notch angle 90°+5°/-1°; thickness 500.0µm±25.0µm; conductivity type: semi-insulating. [12-inch] Diameter 300.0mm+0mm/-0.5mm; surface orientation {0001}±0.5°; primary flat: Notch; no secondary flat; Notch orientation <1100>±5.0°; Notch depth 1.0mm+0.25mm/-0.00mm from edge; Notch angle 90°+5°/-1°; thickness 750.0µm±25.0µm; conductivity type: semi-insulating. The website does not disclose figures for micropipe density, dislocation density or resistivity.

• Microwave RF devices: by growing a GaN epitaxial layer on a semi-insulating SiC substrate, GaN-on-SiC epitaxial wafers are obtained and further processed into HEMT and other microwave RF devices, applied in information communications, radio detection and other fields
• New-generation communications such as 5G base stations
• GaN heteroepitaxy
• Optics and wearable electronics: 12-inch substrates have broad application prospects in AR glasses and other optical and wearable fields
• Heat dissipation: the high thermal conductivity and thermal stability of SiC conduct heat more effectively, improving heat dissipation and optimizing the overall system; the material is attracting growing attention in heat-sink applications

The official website lists this family as 'P-type silicon carbide substrate', marked 4H P-type, and also labels it '4H aluminum-doped conductive SiC single-crystal substrate' on the homepage and product navigation. According to the website: P-type SiC substrate materials are mostly used for homoepitaxy to fabricate extra-high-voltage power semiconductor devices, widely applied in smart grids represented by UHV power transmission as well as rail transit and industrial high-power supplies. According to a website news item (article393.html, 2026.04.21), the company made new progress in liquid-phase preparation technology for high-quality p-type substrates, published in the Journal of Crystal Growth.

[6-inch] Diameter 150.0mm+0mm/-0.2mm; surface orientation 4° off toward <1120>±0.5°; primary flat length 47.5mm±1.5mm; secondary flat parallel to <1120>±1.0°; thickness 350.0µm±25.0µm; conductivity type: p-type. [8-inch] Diameter 200.0mm+0mm/-0.2mm; surface orientation 4° off toward <1120>±0.5°; primary flat: Notch; Notch orientation <1100>±1°; Notch depth 1mm+0.25mm/-0mm; Notch angle 90°+5°/-1°; thickness 350.0µm±25.0µm; conductivity type: p-type. [12-inch] Diameter 300.0mm+0mm/-0.5mm; surface orientation 4° off toward <1120>±0.5°; primary flat: Notch; Notch orientation <1100>±5°; Notch depth 1mm+0.25mm/-0mm; Notch angle 90°+5°/-1°; thickness 750.0µm±25.0µm; conductivity type: p-type. The website does not disclose figures for micropipe density, dislocation density or resistivity.

• High-voltage high-power devices: SiC-based IGBTs (insulated-gate bipolar transistors) fabricated on p-type substrates use bipolar carrier injection to create conductivity modulation, significantly reducing on-state losses at high voltage compared with traditional unipolar devices, simplifying power systems and improving energy conversion efficiency; suitable for smart grids, AI energy management and other high-voltage and UHV fields
• Smart grids represented by UHV power transmission
• Rail transit
• Industrial high-power power supplies
• Heat-sink applications: the high thermal conductivity and thermal stability of SiC conduct heat more effectively, improving heat dissipation; the material is attracting growing attention in heat-sink applications

On the conductive SiC single-crystal substrate product page, the official website lists 'high-brightness LED' as an independent application direction. Website text: the thermal and lattice mismatch between SiC and GaN is small, giving good epitaxial layer quality, and SiC has good thermal and electrical conductivity, offering great advantages in high-power LEDs; LEDs on SiC substrates are bright, energy-efficient and long-lived. This family is the SiC substrate product direction for high-brightness (high-power) LED applications, based on conductive (n-type) substrates.

Same specification system as the conductive (4H n-type) substrates, differentiated by 6/8/12 inch. [6-inch] Diameter 150.0mm+0mm/-0.2mm; surface orientation 4° off-axis ±0.5°; primary flat length 47.5mm±1.5mm; primary flat orientation ±1.0°; secondary flat: none; thickness 350.0µm±25.0µm; polytype 4H; conductivity type: n-type. [8-inch] Diameter 200.0mm+0mm/-0.5mm; surface orientation 4° off-axis ±0.5°; primary flat: Notch; Notch orientation ±1°; Notch angle 90°+5°/-1°; Notch depth 1mm+0.25mm/-0mm from edge; secondary flat: none; thickness 350/500.0µm±25.0µm; polytype 4H; conductivity type: n-type. [12-inch] Diameter 300.0mm+0mm/-0.5mm; surface orientation 4° off-axis ±0.5°; primary reference: Notch; secondary flat: none; Notch orientation ±5°; Notch angle 90°+5°/-1°; Notch depth 1mm+0.25mm/-0mm from edge; thickness 750.0µm±25.0µm; polytype 4H; conductivity type: n-type. Key performance dimensions for LED applications are the small thermal and lattice mismatch between SiC and GaN, good epitaxial layer quality, and good thermal and electrical conductivity; the website does not disclose application-specific figures such as defect density.

• High-brightness (high-power) LED: small thermal and lattice mismatch between SiC and GaN, good epitaxial layer quality, good thermal and electrical conductivity, offering great advantages in high-power LEDs
• LEDs on SiC substrates are bright, energy-efficient and long-lived
• Growing GaN epitaxial layers on SiC substrates for high-power light-emitting devices

On both the semi-insulating SiC single-crystal substrate and P-type SiC substrate product pages, the official website lists 'heat dissipation applications' as an independent application direction, pointing to the use of SiC as a heat sink (thermal substrate / thermal management material). Website text: heat dissipation has always been one of the main factors affecting device lifetime; the high thermal conductivity and thermal stability of SiC conduct heat more effectively, improving heat dissipation and optimizing the overall system, and the material is attracting growing attention in heat-sink applications. This is a material-level application-direction family; the website gives no independent models or dimension tables for heat-sink material, and specifications follow the material-property descriptions of SiC substrate materials such as high thermal conductivity and thermal stability.

Presented by the official website as material properties rather than a standalone model specification: SiC (4H-SiC) thermal conductivity 4.9 W/cmK; bandgap 3.26 eV; critical breakdown field strength 2.8 MV/cm; saturated electron drift velocity 2.7 (1E7 cm/s) (figures from the website knowledge base 'What is silicon carbide', page product3.html). The website emphasizes that its 'high thermal conductivity and thermal stability conduct heat more effectively, improving heat dissipation and optimizing the overall system'. The website gives no independent dimensions, thickness or thermal resistance figures for heat-sink material, so no figures are added.

• Heat-sink applications: the material is attracting growing attention in heat-sink applications
• Heat dissipation for power devices and modules: heat dissipation is one of the main factors affecting device lifetime; high thermal conductivity conducts heat effectively and lowers device temperature
• System-level thermal management optimization: improving heat dissipation and optimizing the overall system
• Semi-insulating substrates simultaneously exploit the good thermal conductivity of SiC in RF devices (heat dissipation of GaN RF devices)

In the product description of the 4H semi-insulating SiC single-crystal substrate page, the official website states: semi-insulating SiC substrate materials also have excellent optical properties, and 12-inch substrates have broad application prospects in AR glasses and other optical and wearable electronics fields. On this basis, an 'optics and wearable electronics' application-direction family is created separately, carried by the 12-inch 4H semi-insulating SiC single-crystal substrate.

[12-inch (4H semi-insulating)] Diameter 300.0mm+0mm/-0.5mm; surface orientation {0001}±0.5°; primary flat: Notch; no secondary flat; Notch orientation <1100>±5.0°; Notch depth 1.0mm+0.25mm/-0.00mm from edge; Notch angle 90°+5°/-1°; thickness 750.0µm±25.0µm; conductivity type: semi-insulating. For optical performance the website only states 'excellent optical properties' and does not disclose figures such as refractive index, transmittance or surface roughness; the website notes that more detailed product information is available from the marketing team.

• AR glasses and other optical fields
• Wearable electronics
• Optical and wearable electronics prospects brought by 12-inch large-size substrates

On the 4H semi-insulating SiC single-crystal substrate product page, the official website lists 'microwave RF devices' as an independent application direction. Website text: semi-insulating SiC substrates have high resistivity and are commonly used for GaN heteroepitaxy; RF devices represented by HEMT combine the good thermal conductivity of SiC with the high-power RF output of GaN at high frequencies, and are widely used in new-generation communications such as 5G base stations; by growing a GaN epitaxial layer on a semi-insulating SiC substrate, GaN-on-SiC epitaxial wafers are obtained and further processed into HEMT and other microwave RF devices, applied in information communications, radio detection and other fields. This family unfolds the RF/communication direction by application.

[6-inch] Diameter 150.0mm+0mm/-0.2mm; surface orientation {0001}±0.2°; primary flat: Notch; no secondary flat; Notch orientation <1100>±1.0°; Notch depth 1.0mm+0.25mm/-0.00mm from edge; Notch angle 90°+5°/-1°; thickness 500.0µm±25.0µm; conductivity type: semi-insulating. [8-inch] Diameter 200.0mm+0mm/-0.5mm; surface orientation {0001}±0.2°; primary flat: Notch; no secondary flat; Notch orientation <1100>±1.0°; Notch depth 1.0mm+0.25mm/-0.00mm from edge; Notch angle 90°+5°/-1°; thickness 500.0µm±25.0µm; conductivity type: semi-insulating. [12-inch] Diameter 300.0mm+0mm/-0.5mm; surface orientation {0001}±0.5°; primary flat: Notch; no secondary flat; Notch orientation <1100>±5.0°; Notch depth 1.0mm+0.25mm/-0.00mm from edge; Notch angle 90°+5°/-1°; thickness 750.0µm±25.0µm; conductivity type: semi-insulating. Key material properties (website knowledge base): SiC thermal conductivity 4.9 W/cmK, saturated electron drift velocity 2.7 (1E7 cm/s), combining heat conduction and high-frequency high-power output. The website does not disclose application-specific figures such as RF loss.

• New-generation communications such as 5G base stations (mainstream choice for 5G base-station power amplifiers)
• Wireless communication infrastructure
• Microwave RF devices: HEMT and other microwave RF devices
• Information communications, radio detection
• GaN heteroepitaxy: growing GaN epitaxial layers on semi-insulating SiC substrates to obtain GaN-on-SiC epitaxial wafers

On the P-type SiC substrate product page, the official website lists 'high-voltage high-power devices' as an independent application direction. Website text: SiC-based IGBTs (insulated-gate bipolar transistors) fabricated on p-type substrates use bipolar carrier injection to create conductivity modulation, significantly reducing on-state losses at high voltage compared with traditional unipolar devices, simplifying power systems and improving energy conversion efficiency; suitable for smart grids, AI energy management and other high-voltage and UHV fields. P-type SiC substrate materials are mostly used for homoepitaxy to fabricate UHV power semiconductor devices, widely applied in smart grids represented by UHV power transmission as well as rail transit and industrial high-power supplies.

[6-inch] Diameter 150.0mm+0mm/-0.2mm; surface orientation 4° off toward <1120>±0.5°; primary flat length 47.5mm±1.5mm; secondary flat parallel to <1120>±1.0°; thickness 350.0µm±25.0µm; conductivity type: p-type. [8-inch] Diameter 200.0mm+0mm/-0.2mm; surface orientation 4° off toward <1120>±0.5°; primary flat: Notch; Notch orientation ±1°; Notch depth 1mm+0.25mm/-0mm; Notch angle 90°+5°/-1°; thickness 350.0µm±25.0µm; conductivity type: p-type. [12-inch] Diameter 300.0mm+0mm/-0.5mm; surface orientation 4° off toward <1120>±0.5°; primary flat: Notch; Notch orientation ±5°; Notch depth 1mm+0.25mm/-0mm; Notch angle 90°+5°/-1°; thickness 750.0µm±25.0µm; conductivity type: p-type. The website does not disclose figures such as carrier lifetime or resistivity; according to website news article393.html (2026.04.21), the company made new progress in liquid-phase preparation technology for high-quality p-type substrates, published in the Journal of Crystal Growth, covering crystal quality, electrical uniformity, long carrier lifetime and innovative thermal-field design.

• High-voltage and UHV fields: smart grids and AI energy management
• Smart grids represented by UHV power transmission
• Rail transit
• Industrial high-power power supplies
• SiC-based IGBTs (insulated-gate bipolar transistors) and other bipolar high-voltage high-power devices

The 6-inch specification tier of the 4H nitrogen-doped conductive SiC single-crystal substrate (4H n-type) as expanded by size in the official product center. Conductive SiC substrate materials are mostly used for homoepitaxy to fabricate power semiconductor devices, widely applied in new energy represented by electric vehicles as well as photovoltaic and wind power generation; currently the company's 6- and 8-inch products are stably delivered to global mass-production customers.

Diameter 150.0mm+0mm/-0.2mm; surface orientation 4° off-axis ±0.5°; primary flat length 47.5mm±1.5mm; primary flat orientation ±1.0°; Notch orientation /; Notch angle /; Notch depth /; secondary flat: none; thickness 350.0µm±25.0µm; polytype 4H; conductivity type: n-type. Micropipe density, dislocation density and resistivity figures are not disclosed on the official website.

• Homoepitaxy for power semiconductor devices: obtaining SiC homoepitaxial wafers and further fabricating Schottky diodes, MOSFETs, IGBTs and other power devices
• New energy represented by electric vehicles
• Photovoltaic and wind power generation
• Rail transit, high-power power transmission and transformation
• High-brightness (high-power) LED

The 8-inch specification tier of the 4H nitrogen-doped conductive SiC single-crystal substrate (4H n-type) as expanded by size in the official product center. Website text: currently the company's 6- and 8-inch products are stably delivered to global mass-production customers, and the company also has the production capability for 12-inch substrates; conductive substrates are mostly used for homoepitaxy to fabricate power semiconductor devices, widely applied in new energy represented by electric vehicles as well as photovoltaic and wind power generation.

Diameter 200.0mm+0mm/-0.5mm; surface orientation 4° off-axis ±0.5°; primary flat: Notch; primary flat orientation /; Notch orientation ±1°; Notch angle 90°+5°/-1°; Notch depth 1mm+0.25mm/-0mm from edge; secondary flat: none; thickness 350/500.0µm±25.0µm; polytype 4H; conductivity type: n-type. Micropipe density, dislocation density and resistivity figures are not disclosed on the official website.

• Homoepitaxy for power semiconductor devices: Schottky diodes, MOSFETs, IGBTs and other power devices
• New energy represented by electric vehicles
• Photovoltaic and wind power generation
• Rail transit, high-power power transmission and transformation
• High-brightness (high-power) LED

The 12-inch specification tier of the 4H nitrogen-doped conductive SiC single-crystal substrate (4H n-type). Website text: the company has the production capability for 12-inch substrates. According to website news article128.html, the company displayed its 6/8/12-inch SiC substrate product matrix at SEMICON China 2025, including 12-inch high-purity semi-insulating, 12-inch conductive p-type and 12-inch conductive n-type SiC substrates.

Diameter 300.0mm+0mm/-0.5mm; surface orientation 4° off-axis ±0.5°; primary reference: Notch; secondary flat: none; Notch orientation ±5°; Notch angle 90°+5°/-1°; Notch depth 1mm+0.25mm/-0mm from edge; thickness 750.0µm±25.0µm; polytype 4H; conductivity type: n-type. Micropipe density, dislocation density and resistivity figures are not disclosed on the official website.

• Homoepitaxy for power semiconductor devices: Schottky diodes, MOSFETs, IGBTs and other power devices
• New energy represented by electric vehicles
• Photovoltaic and wind power generation
• Rail transit, high-power power transmission and transformation
• High-brightness (high-power) LED

The 6-inch specification tier of the 4H semi-insulating SiC single-crystal substrate (4H Semi-Insulating). Semi-insulating SiC substrates have high resistivity and are commonly used for GaN heteroepitaxy; HEMT-represented RF devices combine the good thermal conductivity of SiC with the high-power RF output of GaN at high frequencies, widely used in new-generation communications such as 5G base stations.

Diameter 150.0mm+0mm/-0.2mm; surface orientation {0001}±0.2°; primary flat orientation /; secondary flat orientation /; primary flat: Notch; no secondary flat; Notch orientation <1100>±1.0°; Notch depth 1.0mm+0.25mm/-0.00mm from edge; Notch angle 90°+5°/-1°; thickness 500.0µm±25.0µm; conductivity type: semi-insulating. Micropipe density, dislocation density and resistivity figures are not disclosed on the official website.

• Microwave RF devices: GaN-on-SiC epitaxial wafers further processed into HEMT and other devices
• New-generation communications such as 5G base stations
• Information communications, radio detection
• GaN heteroepitaxy
• Heat-sink / thermal dissipation applications

The 8-inch specification tier of the 4H semi-insulating SiC single-crystal substrate (4H Semi-Insulating). Semi-insulating SiC substrates have high resistivity and are commonly used for GaN heteroepitaxy; HEMT-represented RF devices combine the good thermal conductivity of SiC with the high-power RF output of GaN at high frequencies, widely used in new-generation communications such as 5G base stations.

Diameter 200.0mm+0mm/-0.5mm; surface orientation {0001}±0.2°; primary flat orientation /; secondary flat orientation /; primary flat: Notch; no secondary flat; Notch orientation <1100>±1.0°; Notch depth 1.0mm+0.25mm/-0.00mm from edge; Notch angle 90°+5°/-1°; thickness 500.0µm±25.0µm; conductivity type: semi-insulating. Micropipe density, dislocation density and resistivity figures are not disclosed on the official website.

• Microwave RF devices: GaN-on-SiC epitaxial wafers further processed into HEMT and other devices
• New-generation communications such as 5G base stations
• Information communications, radio detection
• GaN heteroepitaxy
• Heat-sink / thermal dissipation applications

The 12-inch specification tier of the 4H semi-insulating SiC single-crystal substrate (4H Semi-Insulating). Website text: semi-insulating SiC substrate materials also have excellent optical properties, and 12-inch substrates have broad application prospects in AR glasses and other optical and wearable electronics fields. According to website news article128.html, the company exhibited the 12-inch high-purity semi-insulating SiC substrate at SEMICON China 2025.

Diameter 300.0mm+0mm/-0.5mm; surface orientation {0001}±0.5°; primary flat orientation /; secondary flat orientation /; primary flat: Notch; no secondary flat; Notch orientation <1100>±5.0°; Notch depth 1.0mm+0.25mm/-0.00mm from edge; Notch angle 90°+5°/-1°; thickness 750.0µm±25.0µm; conductivity type: semi-insulating. Micropipe density, dislocation density and resistivity figures are not disclosed on the official website.

• AR glasses and other optical fields
• Wearable electronics
• Microwave RF devices: GaN-on-SiC epitaxial wafers further processed into HEMT and other devices
• New-generation communications such as 5G base stations
• Heat-sink / thermal dissipation applications

The 6-inch specification tier of the 4H aluminum-doped conductive SiC single-crystal substrate (4H P-type). P-type SiC substrate materials are mostly used for homoepitaxy to fabricate UHV power semiconductor devices, widely applied in smart grids represented by UHV power transmission as well as rail transit and industrial high-power supplies.

Diameter 150.0mm+0mm/-0.2mm; surface orientation 4° off toward <1120>±0.5°; primary flat length 47.5mm±1.5mm; secondary flat parallel to <1120>±1.0°; Notch orientation /; Notch depth /; Notch angle /; thickness 350.0µm±25.0µm; conductivity type: p-type. Micropipe density, dislocation density and resistivity figures are not disclosed on the official website.

• Homoepitaxy for UHV power semiconductor devices
• Smart grids represented by UHV power transmission
• Rail transit
• Industrial high-power power supplies
• Heat-sink / thermal dissipation applications

The 8-inch specification tier of the 4H aluminum-doped conductive SiC single-crystal substrate (4H P-type). According to website news article393.html, following the world's first 8-inch liquid-phase crystal and 12-inch p-type substrate, the company continues to lead the industry in liquid-phase technology.

Diameter 200.0mm+0mm/-0.2mm; surface orientation 4° off toward <1120>±0.5°; primary flat: Notch; secondary flat length /; Notch orientation ±1°; Notch depth 1mm+0.25mm/-0mm; Notch angle 90°+5°/-1°; thickness 350.0µm±25.0µm; conductivity type: p-type. Micropipe density, dislocation density and resistivity figures are not disclosed on the official website.

• Homoepitaxy for UHV power semiconductor devices
• Smart grids represented by UHV power transmission
• Rail transit
• Industrial high-power power supplies
• Heat-sink / thermal dissipation applications

The 12-inch specification tier of the 4H aluminum-doped conductive SiC single-crystal substrate (4H P-type). According to website news article393.html and article128.html, the company has realized 12-inch p-type substrates and exhibited the 12-inch conductive p-type SiC substrate at SEMICON China 2025; 12-inch substrates target clean-energy applications such as photovoltaic energy storage, 5G communications and high-voltage smart grids.

Diameter 300.0mm+0mm/-0.5mm; surface orientation 4° off toward <1120>±0.5°; primary flat: Notch; secondary flat length /; Notch orientation ±5°; Notch depth 1mm+0.25mm/-0mm; Notch angle 90°+5°/-1°; thickness 750.0µm±25.0µm; conductivity type: p-type. Micropipe density, dislocation density and resistivity figures are not disclosed on the official website.

• Homoepitaxy for UHV power semiconductor devices
• Smart grids represented by UHV power transmission
• Rail transit
• Industrial high-power power supplies
• Heat-sink / thermal dissipation applications