InventChip

InventChip's core power device product line. Compared with silicon (Si) MOSFETs, silicon carbide (SiC) MOSFETs offer lower conduction losses, faster switching speed and higher operating frequency, making them suitable for more efficient and more compact application scenarios. The products cover the 1st-generation (IV1Q), 2nd-generation (IV2Q) and 3rd-generation (IV3Q) SiC MOSFET process platforms; most models are AEC-Q101 automotive-qualified (the suffix Z in the model designation indicates AEC-Q101), and some bare dies are certified to JEDEC standards. There is also the innovative co-packaged device IV3M12035T935 in a TO247-4Slim package, which integrates a 3rd-generation 1200V 35mOhm SiC MOSFET with a Si diode; it was developed specially for photovoltaic applications and won the "2025 Expert Aurora Award - Outstanding Product of the Year".

Voltage classes cover 650V / 750V / 1200V / 1400V / 1700V; RDS(on)@25C covers approximately 11.5mOhm~1Ohm. Typical specifications of the 1200V series include IV3Q12013T4Z (1200V/147A/13.5mOhm/22.5mOhm@175C/TO247-4), IV3Q12035T4Z (1200V/67A/35mOhm/57mOhm/TO247-4), IV3Q12021T4Z (1200V/102A/21mOhm/34.8mOhm/TO247-4), IV3Q12075QDZ (1200V/39A/68mOhm/112mOhm/QDPAK), IV2Q17020T4Z (1700V/94A/20mOhm/44mOhm/TO247-4), IV3Q07011T4Z (750V/167A/11.5mOhm/16mOhm/TO247-4), IV3Q06025T4Z (650V/92A/25mOhm/31.5mOhm/TO247-4), IV3Q06025K2Z (650V/92A/25mOhm/31.5mOhm/X2PAK) and IV3Q12035K1Z (1200V/68A/35mOhm/57mOhm/TC3Pak). Package types include TO247-4, TO247-4S, TO247-3, TO263-7, TOLL, TC3Pak, X2PAK, QDPAK and Bare Die (bare die, model designations containing BD/BDY/BDB/BAG/BDG); automotive model suffixes: T9Z/T4Z/D7Z/K1Z/K2Z/QDZ indicate AEC-Q101, while the BD series is JEDEC. The 3rd-generation 1200V SiC MOSFETs cover a resistance range of 10~150mOhm. The TC3Pak top-side-cooled surface-mount package models IV2Q12040K1Z and IV2Q12080K1Z support 15V~18V drive voltage and are already AEC-Q101 certified.

• New-energy vehicle main drive inverter (3rd-generation 1200V 10mOhm/13mOhm large-die SiC MOSFET)
• On-board charger OBC
• EV DC/DC converters
• On-board air-conditioning compressor / PTC heating
• Charging piles / charging modules
• Photovoltaic inversion and photovoltaic boost
• Energy storage systems
• UPS power supplies
• Server / telecom power supplies
• Industrial power supplies and welding machines
• Motor drives
• Pulsed power and induction heating

Silicon carbide (SiC) power module products combine the unique advantages of SiC devices and different packages, supporting more efficient, more compact and simpler system designs. The products cover a variety of packages and topologies, including SMPD molded half-bridge modules, 1B-packaged half-bridge modules, HPD three-phase bridge modules, SOT-227 standard modules (with three internal configurations: Single MOSFET, MOSFET+SBD and SBD in parallel) and TM molded three-phase modules. Among them, the SMPD molded SiC half-bridge module has passed AQG-324 automotive qualification and is used in the OBC of new-energy vehicles; the 2000V SiC power module has been mass-applied in large photovoltaic power plants; the IV1B12009HA2L uses the same outline dimensions as Easy 1B, with its internal chips mounted on a DCB copper-clad ceramic substrate, providing internal insulation so that it can be attached directly to a heatsink without an additional ceramic insulating pad, and it integrates an NTC negative-temperature-coefficient thermistor for temperature monitoring and a built-in Kelvin source pin to suppress drive voltage spikes during high-speed switching.

Official parameters (all with Status: Active): IVHD121M4TA3Z JEDEC 1200V / 759A, Tf=60C / 1.66mOhm / Vth 2.8V / three-phase bridge / HPD; IVHD071M5TB3Z JEDEC 750V / 660A, Tf=60C / 1.73mOhm / Vth 2.8V / three-phase bridge / HPD; IVSM12075HA3Z JEDEC 1200V / 33A, Tc=25C / 75mOhm / 2.8V / half bridge / SMPD; IVSM12035HA3Z JEDEC 1200V / 61A, Tc=25C / 35mOhm / 2.8V / half bridge / SMPD; IVSM06025HA2Z AEC-Q101 650V / 72A, Tc=100C / 25mOhm / 2.8V / half bridge / SMPD (using 2nd-generation SiC MOSFET chips, insulated package, top-side cooling supported, already AQG-324 certified); IV1B12009HA2L JEDEC 1200V / 100A, Tc=117C / 9mOhm / 2.8V / half bridge / 1B (outline height only 12mm, 2nd-generation planar-gate 1200V SiC MOSFET chips, turn-on voltage +15V~+18V, turn-off voltage -3.5V~-2V, rated current 100A); IV1B12013HA1L JEDEC 1200V / 96A, Th=50C / 13mOhm / 3.2V / half bridge / 1B; IVTM12080TA1Z AEC-Q101 1200V / 30A, Tc=100C / 80mOhm / 3.6V / three-phase / TM (molded); IVST12013MA3L JEDEC 1200V / 96A, Tc=100C / 13mOhm / 2.8V / MOSFET+SBD / SOT-227; IVST12017MA1L JEDEC 1200V / 85A, Tc=100C / 17mOhm / 3.2V / MOSFET+SBD / SOT-227; IVST12017SA1L JEDEC 1200V / 85A, Tc=100C / 17mOhm / 3.2V / Single MOSFET / SOT-227; IVST12050SA1L JEDEC 1200V / 43A, Tc=100C / 50mOhm / 3.2V / Single MOSFET / SOT-227; IVST12040DA1L 1200V / 40A, Tc=144C / SBD in parallel / SOT-227; IVST12080DA1L 1200V / 80A, Tc=136C / SBD in parallel / SOT-227; IVST12120DA1L 1200V / 120A, Tc=98C / SBD in parallel / SOT-227; IVST12160DA1L 1200V / 160A, Tc=98C / SBD in parallel / SOT-227. In addition, a 2000V SiC power module series is already in mass application.

• New-energy vehicle main drive inverter
• On-board charger OBC (the SMPD molded SiC half-bridge module is already used in the OBC of popular new-energy vehicle models)
• Large photovoltaic power plants (2000V SiC power module)
• Photovoltaic inverters and energy storage converters
• DC charging piles / charging modules
• High-frequency high-voltage DC-DC converters
• UPS uninterruptible power supplies
• EV DC/DC converters

The Nextdrive series of SiC-specific gate driver ICs, independently innovated and developed by InventChip, is compact, high-speed and intelligent, and includes single/dual-channel types with different isolation ratings, negative-bias drive, short-circuit protection and Miller-effect suppression, to support more stable and efficient system designs. The IVCR1401/IVCR1402 are the industry's first compact, high-speed, intelligent gate driver ICs dedicated to SiC MOSFETs; they are also suitable for bootstrap high-side gate driving, integrate desaturation short-circuit protection with a built-in blanking time, and additionally provide undervoltage lockout (UVLO) and fault reporting. The IVCR1412 is the industry's first gate driver IC that integrates negative bias and Miller-effect suppression in an extremely compact SOT23-6 package; its output behaves as a quasi current source, eliminating the need for a gate resistor, and it can be mounted close to the power transistor to minimise the stray inductance of the gate drive loop. The IVCR2401 is a general-purpose dual-channel SiC/Si MOSFET/IGBT gate driver IC (SOIC8 package, available with or without thermal pad). The IVCO1A0x is a family of isolated single-channel gate driver ICs that are in mass production and AEC-Q100 automotive certified. As disclosed on the official website, InventChip has cumulatively delivered about 100 million gate driver ICs.

IVCR1401 / IVCR1402: 8-pin package, compatible with a wide supply range up to 35V, 4A peak source/sink current, internally integrated -3.5V negative bias, integrated desaturation short-circuit protection (internal constant current source 1mA, threshold raised to 9.5V, trigger threshold adjustable via external R1), UVLO and fault reporting; the IVCR1402Q is the automotive version, AEC-Q100 certified, integrating negative-bias generation, desaturation protection and programmable UVLO in an 8-pin package. IVCR1412: extremely compact SOT23-6 package, integrates negative bias and active Miller-effect suppression, and its strong pull-down output eliminates the need for a gate resistor. IVCR2401: input voltage range 0-25V, provides +/-4A peak source/sink current, dual independent outputs, typical delay mismatch between the two channels 1ns, typical propagation delay 45ns (maximum 80ns), integrated input filter circuit that removes typical 20ns input glitches, operating temperature -40C~125C, two package options SOIC-8 and SOIC-8 with thermal pad (EP), supports a two-channel parallel mode. IVCR2404: 4A dual-channel high-speed low-side gate driver. IVCO1A0x (IVCO1A01 split output / IVCO1A02 active Miller clamp): isolated single-channel, 8.5A peak source current and 10A peak sink current, maximum output voltage 36V, integrated UVLO, AEC-Q100 certified. IVCO1411 / IVCO1412: isolated single-channel gate drivers, 4A peak source/sink current; of these, the IVCO1412 (including the IVCO1412DW version with integrated isolation and negative-bias drive) is described in publicly available official articles as a "product under development" and will retain the full short-circuit protection / negative bias / bootstrap functionality. The field dimensions on the official list page are Isolation / Vcc / Channel / Iout / Negative bias / UVLO / Delay / Package / Status.

• On-board air-conditioning compressor drive (solutions based on the IVCR1402 have passed stringent customer validation and entered mass production in vehicles; there are also the IVCO1A02DW solution and the IVCR1402+IVCO1412DW solution)
• On-board OBC (Nextdrive IVCR1401/1402 paired with 80mOhm/1200V TO247-4 or TO247-3 SiC MOSFETs)
• On-board PTC heating
• Electric air-conditioning compressors
• Forklift chargers
• Development of high-power electric drives with multiple paralleled SiC MOSFETs (17mOhm/1200V TO-247 single devices paired with the IVCR1412)
• PFC power supplies and totem-pole PFC
• Switching mode power supplies SMPS (AC/DC and DC/DC converters)
• Server / telecom power supplies
• UPS uninterruptible power supplies
• Photovoltaic / wind inverters
• EV charging piles and charging station systems
• EV motor controllers
• Fan drives

Silicon carbide (SiC) Schottky barrier diodes (SBD) offer lower conduction losses and higher operating temperature and switching frequency than silicon (Si) diodes, helping to improve overall system efficiency. The products use InventChip's proprietary SiC SBD process technology; a composite termination structure design raises the avalanche breakdown voltage above 1600V (achieving >90% yield on 6-inch wafers), and a novel three-dimensional cell structure achieves extremely low reverse leakage: at room temperature the typical leakage current IR is about 5uA@1200V, and even at the extreme high temperature of 200C the IR is only about 50uA@1200V. In terms of reliability, the products pass stringent tests such as 1000-hour HV-H3TRB (85C/85%RH/960V) and 1000h HV-HTRB (More Than JEDEC). The maximum junction temperature is 175C, with high surge current capability, extremely fast reverse recovery time and a positive temperature coefficient of VF, which favours current sharing when devices are connected in parallel.

The official filter discloses that this family's VRRM covers 650V / 1200V / 2000V; IF(150C) covers 2A~90A (including 2*30A dual-die models); IFSM(tp=10ms) covers 31A~380A; VF(25C) is typically 1.31V~1.55V; VF(175C) is typically 1.48V~2.5V; packages include Bare Die, TO220-2, TO252-2, TO263-2, TO247-3, TO247-2, TO252-3 and DFN8x8. Confirmed models: IV1D12040U3 is a 1200V 40A product using 1st-generation SiC SBD process technology in a TO247-3 package, with lower forward voltage drop (Vf), higher breakdown voltage (BV) and smaller reverse recovery current, and it withstands large surge currents; IV1D12040T2 is a 1200V 40A SiC Schottky diode with a maximum junction temperature of 175C, high surge current capacity and extremely fast reverse recovery time; IV1D12010T2 is a 1200V 10A model with room-temperature IR of about 5uA@1200V and IR of about 50uA@1200V at 200C, and turn-off loss at 200C not exceeding 60mW; IV2D12060T2Z is an automotive-grade 1200V 60A SiC SBD in a TO247-2 package, AEC-Q101 compliant, with a maximum operating junction temperature of 175C, able to withstand surge current impacts of up to 300A for 10ms, and with a positive temperature coefficient of VF.

• Photovoltaic boost converters (Solar Power Boost)
• Inverter free-wheeling diodes
• Vienna three-phase PFC
• EV charger piles / charging pile modules
• Industrial switching mode power supplies and telecom power supplies
• New-energy vehicle electronics

Analog control ICs innovatively developed by InventChip provide fast, accurate and reliable analog control signals without the need for programming or debugging, while overcoming technical difficulties in a variety of applications and helping to develop high-performance power supply products quickly. The representative product IVCC1102 is the industry's first fully featured continuous conduction mode (CCM) totem-pole PFC analog control IC, and in a 16-pin package only; it entered mass production in the first quarter of 2022 and won the "Outstanding Product Innovation Award" of the 8th China Power Supply Society Science and Technology Award. Compared with digital controllers, the IVCC1102 uses a proprietary patented fixed feed-forward ratio control technique, which overcomes control difficulties such as reverse current backflow, smooth zero-crossing current control, simultaneous achievement of low total harmonic distortion (THD) and a fast voltage loop, and resistance to lightning-strike damage.

Official listing: IVCC1102DR is a CCM-mode totem-pole analog control IC, totem-pole topology, SOIC-16 package, status Not for new design; IVCC1102F4AR is a CCM-mode totem-pole analog control IC, totem-pole topology, QFN-20 (4x4) package, status Not for new design; IVCC1104DR is a CCM-mode totem-pole analog control IC, totem-pole topology, SOIC-16 package, status Active; IVCC1104F4AR is a CCM-mode totem-pole analog control IC, totem-pole topology, QFN-20 (4x4) package, status Active. The IVCC1104 is a high-speed, accurate and compact totem-pole PFC controller offered in two package types, SOIC-16 and QFN 4x4 20L, and is the industry's first totem-pole PFC analog controller with fully featured continuous conduction mode (CCM) control. The IVCC1102 is offered in two packages, SOIC-16L and 4x4mm QFN-20L, and comes with a 2.5kW totem-pole PFC reference design.

• Telecom power supplies
• Data center and server power supplies
• Titanium-grade / Platinum-grade high-efficiency power supply designs
• Totem-pole PFC power factor correction (a complete solution together with 650V SiC MOSFETs and Nextdrive gate driver ICs)
• High-performance AC/DC switching mode power supplies