Shenzhen BASiC Semiconductor Co., Ltd.

Basic Semiconductor SiC Schottky diodes cover voltage ratings of 650V/1200V/1400V/1700V/2000V and current from 2A to 97A. Housed in standard packages such as TO-247, TO-220, DFN, SOT-227 and TOLT, they feature zero reverse recovery, low forward voltage drop and strong surge withstand capability. Certified to AEC-Q101, they are used in photovoltaics, charging piles, power supplies and automotive electronics.

Voltage 650V/1200V/1400V/1700V/2000V, current 2A–97A; TO-247/TO-220/DFN/SOT-227/TOLT packages; AEC-Q101 automotive certified

• Photovoltaic inverters
• Charging piles / fast charging
• Switching power supplies / UPS
• New energy vehicles
• Industrial power supplies

Basic Semiconductor SiC MOSFETs are built on a 6-inch wafer platform, covering 650V/750V/1200V/1400V/1700V with RDS(on) down to 6mΩ. They use TO-247-3/4, TOLL, TOLT, TO-263-7, QDPAK and SOT-227 packages. Automotive-grade (A) versions pass AEC-Q101 and meet PPAP requirements, serving motor controllers, onboard power, PV and charging piles.

Voltage 650V/750V/1200V/1400V/1700V, RDS(on) as low as 6mΩ; TO-247/TOLL/TOLT/QDPAK/SOT-227 packages; automotive-grade A type passed AEC-Q101

• EV motor controllers
• Onboard power / OBC
• PV inverters / storage
• Charging piles
• UPS / PFC power supplies

Basic Semiconductor hybrid SiC discrete devices co-package a trench field-stop IGBT with a SiC Schottky diode, offering 650V/1200V and 40A–75A in TO-247-3/4. Compared with conventional silicon IGBTs they greatly cut switching losses, making them ideal for cost-sensitive hard-switching topologies such as hybrid inverters, OBC, UPS, telecom power and high-frequency DC-DC.

Model: BGH75N65HS1 / BGH50N65HF1 / BGH50N65HS1 / BGH50N65ZF1 / BGH75N65HF1 / BGH75N65ZF1 / BGH40N120HS1 / BGH75N120HF1; Collector-emitter voltage: 650V and 1200V; Rated current: 40–75A; Package: TO-247-3 / TO-247-4; Maximum junction temperature: 175°C; Collector-emitter saturation voltage: ≤1.7V; Switching frequency: ≤60kHz; Compliance: RoHS

• Storage / hybrid PV-storage
• Onboard charger OBC
• UPS / telecom power
• High-frequency DC-DC
• Industrial power

Basic Semiconductor industrial full-SiC MOSFET power modules cover 650V/1200V, including EasyPACK™ E1B&E2B, 34mm half-bridge, 62mm half-bridge, Pcore™12 EP2, ED3 half-bridge and E3B flying-capacitor three-level series. Using Si₃N₄ AMB ceramic substrates and high-temperature solder, they deliver low RDS(on), low switching loss and high reliability for high-power chargers, APF, PCS, welders, UPS and high-frequency DCDC.

Voltage 650V/1200V; EasyPACK™/34mm/62mm/Pcore™12/ED3/E3B series; Si₃N₄ AMB substrate, low loss high reliability

• High-power charging piles
• Energy storage PCS / APF
• PV inverters
• High-end welders / induction heating
• Data-center UPS / high-frequency DCDC

The Pcore™6 automotive-grade HPD SiC MOSFET module is a compact high-power module designed for hybrid and pure-EV main traction inverters. It uses pressure silver sintering, copper wire bonding, Si₃N₄ AMB substrate and direct liquid-cooled PinFin, covering 750V/1200V and 600–840A with RDS(on) down to 1.2mΩ, exceeding AQG-324 reliability.

750V/1200V, 600–840A, RDS(on) as low as 1.2mΩ; HPD package, silver sintering, PinFin water cooling, reliability above AQG-324

• EV main traction inverters
• Commercial EV drives
• Hybrid vehicle drives
• Motor controllers

The Pcore™6 HPD Mini adopts an innovative HPD Mini package 20% smaller than standard HPD, with in-house 3rd-generation automotive SiC chips, Si₃N₄ AMB substrate and pressure silver sintering. Stray inductance is ≤6nH, covering 750V/1200V (incl. 1400V) and 380–630A, suited to main traction inverters, motor controllers and compressor drives.

750V/1200V (incl. 1400V), 380–630A, RDS(on) as low as 1.6mΩ; HPD Mini package 20% smaller, stray inductance ≤6nH

• EV main traction inverters
• Motor controllers
• Compressor drives
• Integrated e-drive assemblies

The Pcore™2 automotive-grade DCM SiC MOSFET module uses the mainstream DCM package with trench low-RDS(on) chips, pressure silver sintering, DTS, copper bonding, Si₃N₄ AMB substrate and direct liquid-cooled PinFin. Covering 750V/1200V and 720–920A with Rth(j-f)<0.09K/W and junction 175°C, it suits passenger/commercial EV drives and fuel-cell energy conversion.

750V/1200V, 720–920A, Rth(j-f)<0.09K/W, junction temp 175℃; DCM package, silver sintering, PinFin water cooling

• Passenger EV drives
• Commercial / heavy-truck EV drives
• Fuel-cell energy conversion
• Construction machinery drives

The Pcore™1 automotive-grade TPAK is a high-current-density single-switch module for pure-EV main traction inverters. Pressure silver sintering and Si₃N₄ AMB substrate lower thermal resistance and support multi-device series/parallel, covering 750V/1200V and 250–300A with RDS(on) 5.0–6.8mΩ, offering low loss, high blocking voltage and high reliability.

750V/1200V, 250–300A, RDS(on) 5.0–6.8mΩ; TPAK package, single-switch high current density, supports series/parallel

• EV main traction inverters
• Platform parallel expansion
• Motor controllers
• Onboard power

The Pcell™ automotive-grade molded half-bridge SiC MOSFET module uses Basic Semiconductor's proprietary package with double-sided silver sintering and DTS. It offers low stray inductance (<5nH), low RDS(on) (<2mΩ) and junction 175°C, covering 750V/1200V and 400–700A, with a built-in temperature sensor for high-efficiency, high-power-density drive applications.

750V/1200V, 400–700A, RDS(on)<2mΩ, stray inductance <5nH, junction temp 175℃; molded single-side cooling, double-side silver sintering

• EV main traction inverters
• Drive systems
• Onboard power
• High-power-density apps

The automotive-grade SiC embedded module uses advanced AMB-embedded/copper-block embedding packaging based on a full-bridge 4-chip parallel design, with parasitic inductance as low as 1.2nH, high system integration and efficient cooling. It suits EV powertrains, industrial drives, PV inverters and OBC/DCDC, and is currently in reliability evaluation.

Topology: full bridge with 4 chips in parallel; bus voltage: 1200 V; nominal current: 400 A; parasitic inductance: 1.2 nH; packaging: AMB embedded / copper-block embedding; max junction temperature: 175 °C; thermal resistance Rth(j-c): 0.15 K/W; operating temperature: -40 °C to +150 °C

• EV powertrains
• Industrial drives
• PV inverters
• OBC / DCDC

Basic Semiconductor isolated gate-driver ICs include single/dual-channel and smart short-circuit-protected drivers across the BTD21520xx, BTD25350xx and BTD5350xx families, with isolation voltage up to 5000Vrms for gate driving of devices up to 1700V. They serve isolated DC-DC/AC-DC, PV inverters, motor drives, EV charging and UPS.

Model: BTD21520xx / BTD25350xx / BTD5350xx; Isolation voltage: 5000 Vrms; Blocking voltage: ≤ 1700 V; Channel count: 1 ~ 2; Drive current: ± 5 A; Propagation delay: ≤ 60 ns; Junction temperature: -40 ℃ ~ +125 ℃; Package: SOIC-8 / SOIC-16 WB

• Isolated DC-DC / AC-DC
• PV inverters
• Motor drives
• EV charging / UPS
• Server power

Basic Semiconductor's BTL2752x low-side driver ICs are dual-channel high-speed low-side gate drivers with rail-to-rail output, up to 5A source/sink current and 13ns propagation delay. They support inverting/non-inverting logic with enable and tolerate −5V, used in PFC, DCDC, synchronous rectification, flyback and transformer-isolated drives from hundreds of watts to tens of kilowatts.

Model: BTL2752x; Channel count: 2; Drive current: 5 A source / sink; Propagation delay: ≤ 13 ns; Supply voltage: -5 V ~ +20 V; Junction temperature: -40 ℃ ~ +125 ℃; Package: SOP-8 / DFN-8

• PFC / LLC power
• DCDC / sync rectification
• Micro PV inverters
• Motor drives
• Onboard / charging piles

Basic Semiconductor's gate-driver portfolio includes bootstrap bridge drivers such as BTD3011R, alongside isolated and low-side drivers. With isolation up to 8000V and ±15A drive current, they suit devices up to 1700V. The part is listed only in the gate-driver overview and selection guide, without a dedicated specification page.

Model: BTD3011R; Isolation voltage: 8000 V; Drive current: ± 15 A; Blocking voltage: ≤ 1700 V; Propagation delay: ≤ 100 ns; Switching frequency: ≤ 1 MHz; Junction temperature: -40 ℃ ~ +125 ℃; Package: SOIC-8

• Half / full-bridge conversion
• Motor drives
• PV / storage inverters
• Industrial power

Basic Semiconductor's power-management ICs introduce the BTP1521xx forward DC-DC switching-regulator family with integrated soft-start and over-temperature protection, up to 6W output and 1.5MHz frequency (set via OSC pin) in DFN3×3-8/SOP-8. It powers the secondary side of isolated drivers in charging modules, welders, servo, PV inverters and storage PCS.

Model: BTP1521xx; Output power: 6 W; Switching frequency: ≤ 1.5 MHz; Supply voltage: 9 V ~ 30 V; Junction temperature: -40 ℃ ~ +125 ℃; Package: DFN3×3-8 / SOP-8; Certification: AEC-Q100

• Charging modules
• Welder power
• Servo motor drives
• PV inverters
• Storage PCS

Based on advanced SiC epitaxy, Basic Semiconductor develops SiC diode and MOSFET bare dies and wafers. It mass-produces 650V/1200V SiC diode and 1200V/1700V SiC MOSFET bare dies/wafers (BW3D/BD3D, BW2M/BD2M series), serving module makers and device customers who need their own packaging.

Model: BW3D / BD3D / BW2M / BD2M; Blocking voltage: 650 V / 1200 V / 1700 V; Rated current: 20 A ~ 80 A; On-resistance: ≤ 80 mΩ @ 1200 V; Junction temperature: 175 ℃; Wafer size: 150 mm (6 inch); Package: Bare die / wafer

• Module makers' own packaging
• Device customer customization
• R&D and trial production
• SiC device manufacturing