AccoPower

Automotive-grade SiC MOSFET module designed for main-drive inverters of new energy electric vehicles, with a three-phase full-bridge (6-in-1) topology, VDss 1200V and RDS(ON)-typ of 2/3 mΩ, and an operating junction temperature of -40°C to 175°C. It features a Pin-Fin direct water-cooled baseplate, sintering technology, PressFIT press-fit connection and a low stray inductance design. Reliability is validated by AQG 324 testing, the module is RoHS compliant, and it has been in mass production since April 2022.

Model: APD-V2; Topology: three-phase full-bridge Sixpack (6-in-1); Drain-source voltage VDSS: 1200 V; On-resistance RDS(on): 2 mΩ - 3 mΩ; Continuous drain current ID: 400 A; Operating junction temperature Tj: -40 ℃ - +175 ℃; Cooling: Pin-Fin direct water-cooled baseplate; Isolation voltage: 3000 V AC / 1 min

• Main-drive inverters for battery-electric and hybrid new energy vehicles
• High-power motor drives

An upgraded version of the APD-V2, this automotive-grade SiC MOSFET module is optimized for main-drive applications of new energy electric vehicles. It offers a three-phase full-bridge (6-in-1) topology, VDss 750V/1200V, RDS(ON)-typ of 1–4 mΩ and an operating junction temperature of -40°C to 175°C. It uses a Pin-Fin direct water-cooled baseplate, PressFIT press-fit connection, sintering technology, Clip bond technology and a laminated busbar design for low stray inductance. Validated by AQG 324, it is currently in mass production.

Model: APD-V5; Topology: three-phase full-bridge Sixpack (6-in-1); Drain-source voltage VDSS: 750 V / 1200 V; On-resistance RDS(on): 1 mΩ - 4 mΩ; Continuous drain current ID: 450 A; Operating junction temperature Tj: -40 ℃ - +175 ℃; Packaging process: PressFIT press-fit + sintering + Clip bond; Isolation voltage: 3000 V AC / 1 min

• Main-drive inverters for battery-electric and hybrid new energy vehicles
• High-power motor drives

A next-generation main-drive SiC MOSFET module for new energy vehicles, providing a multi-dimensional high-performance solution for automotive traction inversion. It features a three-phase full-bridge (6-in-1) topology, VDss 750V/1200V, RDS(ON)-typ of 2/3/4 mΩ and Pin-Fin zoned water cooling. Highlights include an innovative structure, outstanding output capability, ultra-low inductance, laser welding technology and a power-cycling lifetime exceeding 100,000 cycles. It is listed on the official website as a next-generation product.

Model: APD-V5G; Topology: three-phase full-bridge Sixpack (6-in-1); Drain-source voltage VDSS: 750 V / 1200 V; On-resistance RDS(on): 2 mΩ - 4 mΩ; Continuous drain current ID: 500 A; Operating junction temperature Tj: -40 ℃ - +175 ℃; Cooling: Pin-Fin zoned water cooling; Power cycling lifetime: > 100000 cycles

• Main-drive inverters for battery-electric and hybrid new energy vehicles
• High-power motor drives

A next-generation main-drive SiC MOSFET module for new energy vehicles with a three-phase full-bridge (6-in-1) topology, VDss 1200V, RDS(ON)-typ of 2/3 mΩ, Pin-Fin direct water cooling and an operating junction temperature of -40°C to 175°C. Its innovative structure increases output capability by 20%, with ultra-low inductance, ultra-high thermal conductivity and a power-cycling lifetime of more than 100,000 cycles. It is listed on the official website as a next-generation product.

Model: APD-V6; Topology: three-phase full-bridge Sixpack (6-in-1); Drain-source voltage VDSS: 1200 V; On-resistance RDS(on): 2 mΩ - 3 mΩ; Continuous drain current ID: 450 A; Operating junction temperature Tj: -40 ℃ - +175 ℃; Cooling: Pin-Fin direct water cooling; Output capability increase: ≥ 20%

• Main-drive inverters for battery-electric and hybrid new energy vehicles
• High-power motor drives

A next-generation main-drive SiC MOSFET module for new energy vehicles with a customized half-bridge topology, VDss 1200V, RDS(ON)-typ of 2/3 mΩ and an operating junction temperature of -40°C to 175°C. A fully laminated power circuit achieves ultra-low stray inductance, providing flexible solutions for the traction inverters of new energy vehicles. It is listed on the official website as a next-generation product.

Model: HBM; Topology: customized half-bridge; Drain-source voltage VDSS: 1200 V; On-resistance RDS(on): 2 mΩ - 3 mΩ; Continuous drain current ID: 400 A; Operating junction temperature Tj: -40 ℃ - +175 ℃; Power circuit: fully laminated busbar; Stray inductance: ≤ 8 nH

• Main-drive inverters for battery-electric and hybrid new energy vehicles
• High-power motor drives

Industrial-grade SiC power MOSFET module in a 62MM package with a single-switch topology, VDss 1200V and RDS(ON)-typ of 6 mΩ. It operates stably at 175°C and offers parasitic inductance optimized for SiC devices, excellent short-circuit performance and high current output capability, with an integrated NTC temperature sensor option. Its status on the official website is mass production.

Model: 62MM module; Topology: single switch; Drain-source voltage VDSS: 1200 V; On-resistance RDS(on): 6 mΩ; Continuous drain current ID: 200 A; Operating junction temperature Tj: -40 ℃ - +175 ℃; Package size: 62 mm × 106 mm; Temperature sensor: optional integrated NTC

• Industrial applications
• EV chargers
• Induction heating and welding

Industrial-grade discrete SiC MOSFETs based on an advanced trench process, offered in TO-247 and TO-263 packages with VDss 750V/1200V and RDS(ON)-typ of 11/20/40/80 mΩ, and an operating junction temperature of -55°C to 175°C. They feature extremely low gate charge and junction capacitance, turn-off losses only weakly affected by temperature, switching and conduction losses better than comparable devices, strong avalanche ruggedness and low body-diode reverse recovery charge. Their status on the official website is mass production.

Model: TO series SiC MOSFET discrete; Package: TO-247 / TO-263; Drain-source voltage VDSS: 750 V / 1200 V; On-resistance RDS(on): 11 mΩ - 80 mΩ; Continuous drain current ID: 30 A - 100 A; Operating junction temperature Tj: -55 ℃ - +175 ℃; Gate charge Qg: 45 nC - 120 nC; Switching frequency: ≤ 200 kHz

• PV inverters and variable frequency drives
• Switch-mode power supplies
• High-voltage DC/DC converters
• Battery chargers, on-board chargers (OBC) and energy storage systems
• Industrial motor drives

Industrial-grade SiC MOSFET MINI PACK module with a half-bridge topology, VDss 1200V, RDS(ON)-typ of 6/11 mΩ and an operating junction temperature of -55°C to 175°C. Its compact structure delivers high power density and a low stray inductance design with an integrated NTC temperature sensor, pushing flexibility and power density to the limit; the platform covers applications up to 200 kW. Its status on the official website is mass production.

Model: MINI PACK module; Topology: half-bridge; Drain-source voltage VDSS: 1200 V; On-resistance RDS(on): 6 mΩ - 11 mΩ; Continuous drain current ID: 150 A - 250 A; Operating junction temperature Tj: -55 ℃ - +175 ℃; Temperature sensor: integrated NTC; Isolation voltage: 2500 V AC / 1 min

• PV inverters
• Energy storage
• PCS
• APF
• Charging stations