Jiangsu Macro Micro-Tech

MacMic IGBT power modules span 600 V/650 V/750 V/1000 V/1200 V/1700 V voltage classes and use M3i/M4i/M6i/M7i micro-trench chip technologies, with flat-baseplate, copperless-baseplate and pinfin-baseplate packages. Topologies cover half-bridge, three-phase full bridge, three-level I-NPC/T-NPC, PIM power integration, six-pack rectifier, boost chopper and single switch. Certified to automotive grade, they suit new-energy-vehicle traction drives plus industrial and renewable-energy scenarios.

Voltage classes 600/650/750/1000/1200/1700 V; current 10–950 A; chip technologies M3i/M4i/M6i/M7i; packages flat baseplate/copperless baseplate/pinfin baseplate; topologies half-bridge/three-phase bridge/three-level I-NPC/three-level T-NPC/PIM/six-pack rectifier/boost chopper/single switch.

• New energy vehicle traction drive
• PV inverter
• Energy-storage inverter
• Industrial frequency converter
• Welding machine
• UPS power supply

Silicon-carbide hybrid modules integrate SiC diodes into IGBT power modules to form high-power-density integrated power modules. Compared with non-hybrid modules they offer lower switching losses and a higher operating temperature, making them suitable for high-power applications with strict efficiency and loss requirements. They use GHP/GWB packages, cover 650 V and 1200 V, and reach a junction temperature of 175 °C.

Voltage 650 V/1200 V; current 300/450/600 A; VCE(sat) 1.40–1.90 V; junction temperature 175 °C; packages GHP/GWB.

• PV inverter
• Energy-storage system
• Charging pile
• Industrial power supply
• New energy vehicles

MacMic SiC MOSFET power modules use silicon-carbide MOSFET dies and deliver high-frequency, high-voltage and high-temperature operation for demanding, high-reliability scenarios such as automotive electric drives, charging piles and PV inverters. Packages include NV, NCB and SOT-227, with a 1200 V voltage class.

Voltage 1200 V; current 100–107 A; RDS(on) 1.57–13.4 mΩ; junction temperature 150/175 °C; packages NV/NCB/SOT-227.

• Automotive electric drive
• Charging pile
• PV inverter
• Energy-storage system

MacMic fast recovery diode (FRD) power modules cover 200–1700 V voltage classes and use localized minority-carrier lifetime control technology, giving short reverse recovery time, low forward voltage drop, soft recovery behaviour and high avalanche capability. Package families include FS/FY/FJ/FN/FZ/FYB/FD, meeting the need for efficient rectification in industrial control and renewable energy.

Voltage 200/400/500/600/700/1200/1700 V; current 2x60 A–600 A; VF 0.90–3.00 V; trr 49–500 ns; packages FS/FY/FJ/FN/FZ/FYB/FD.

• Frequency converter
• Switching power supply
• Welding power supply
• UPS power supply
• Industrial control power supply

MacMic rectifier bridge modules are compact, carry high current and withstand high voltage; circuit configurations cover half-bridge, common-cathode, single-unit and three-phase rectifier bridges across 1600 V/1800 V/2000 V classes. Packages are extensive (DA/DAB/DE/DEB/DF/DFB/DL/DS) and are widely used in frequency converters, switching power supplies and medical power supplies.

Voltage 1600/1800/2000 V; current 50–300 A; IFSM 500–9000 A; packages DA/DAB/DE/DEB/DF/DFB/DL/DS.

• Frequency converter
• Switching power supply
• Welding power supply
• Medical power supply

MacMic IGBT discrete devices cover 650 V/1200 V and 10–140 A, using micro-trench chip technology for fast switching and strong short-circuit withstand capability. Packages include TO-247-3L/4L, TO-247 Plus-3L/4L, TO-247 LP-4L and TOLT, targeting PV inverters, energy storage, motor drives and charging piles.

Voltage 650/1200 V; current 10–140 A; VCE(sat) 1.45–2.15 V; packages TO-247/TO-247 Plus/TOLT.

• PV inverter
• Energy-storage system
• Industrial power supply
• Motor drive
• Charging pile
• Home appliances

MacMic silicon-carbide Schottky barrier diode (SiC SBD) discrete devices offer low switching loss, high-speed switching performance and excellent thermal behaviour, and are widely used in air conditioners, power supplies, photovoltaic generation systems and fast chargers for electric vehicles. The products are industrially certified and packaged in SOT-227 and TO-247-2L.

Voltage 1200 V; current 2x60 A/20 A; VF 1.4 V; IFSM 180/380 A; junction temperature 175 °C; packages SOT-227/TO-247-2L.

• Air conditioner
• Switching power supply
• Photovoltaic generation
• Electric vehicle fast charging

MacMic silicon-carbide MOSFET discrete devices deliver excellent high-frequency, high-voltage and high-temperature performance; replacing conventional silicon IGBTs in a system can raise switching frequency and power density while lowering total cost. The devices feature low switching loss, high operating junction temperature, low on-resistance and adequate ruggedness across a 1200 V voltage class. The product list is rendered dynamically by front-end JavaScript.

Voltage 1200 V; VGS,op -4/+18 V; junction temperature 175 °C; features low switching loss/low RDS(on)/high junction temperature; applications PV/energy storage/industrial power supply/new energy vehicles/motor drive/charging pile (see the official product list for specific part numbers).

• PV inverter
• Energy-storage system
• Industrial power supply
• New energy vehicles
• Motor drive
• Charging pile

MacMic MOSFET discrete devices feature low on-resistance, fast switching and high avalanche capability, covering high-voltage, high-current scenarios. Packages include TO-247, TO-263 and TO-3PF, suited to switching power supplies, industrial power supplies and home-appliance lighting applications.

Voltage 1500 V; current 2.5 A; RDS(on) 9 Ω; PD 63 W; tf 61 ns; packages TO-247/TO-263/TO-3PF.

• Switching power supply
• Industrial power supply
• Home appliances
• Lighting

MacMic FRED (fast recovery epitaxial diode) discrete devices cover 300–1700 V and 8–100 A with ultrafast recovery time and soft recovery behaviour, plus low reverse recovery charge, low leakage current and high avalanche energy. A broad package range (TO-220/TO-247/TO-3PB and others) supports welding machines, UPS, home appliances and charging piles.

Voltage 300/400/600/700/1000/1200/1700 V; current 8–100 A; VF 1.15–2.9 V; trr 17–50 ns; packages TO-220/TO-220C/TO-220F/TO-247/TO-3PB and others.

• Welding machine
• UPS power supply
• Home appliances
• Charging pile
• Switching power supply

MacMic fast recovery diode chips use localized minority-carrier lifetime control technology for short reverse recovery time, low forward voltage drop, soft recovery behaviour and high avalanche capability, covering 200–1700 V and 4–400 A. The chips are supplied as bare die and are mainly used in IGBT module assembly and power device manufacturing.

Voltage 210/230/350/420/630/640/660/1260 V (bare die); current 2–75 A; VF 0.90–2.80 V; trr 20–90 ns; multiple die sizes available.

• IGBT module assembly
• Power semiconductor device manufacturing
• Industrial control
• Renewable power generation

The GV IGBT module is the automotive-grade power module series from MacMic built with M7i micro-trench chip technology, featuring a distinctive pinfin design and a high-thermal-conductivity baseplate, and focused on new-energy-vehicle traction drive. Recommended as a new product on the official website, the series combines low losses with high heat dissipation.

Chip technology M7i micro-trench; pinfin high-dissipation baseplate; positioning automotive grade/new energy vehicle traction drive; low losses and superior heat dissipation.

• New energy vehicle traction drive
• Charging pile
• Industrial frequency conversion

The 1700V GWB IGBT module is a flagship MacMic product with low conduction voltage drop, high current density and excellent power cycling capability, and it uses a distinctive anti-sulfurization process design to extend reliability life. The series addresses demanding industrial scenarios such as high-voltage frequency converters, wind power and energy storage.

Voltage 1700 V; features low Vce(sat)/high current density/excellent power cycling capability; process distinctive anti-sulfurization design; long reliability life.

• High-voltage frequency converter
• Wind power generation
• Energy-storage system
• Industrial power supply

The GWQ IGBT module uses MacMic M7i chip technology to combine low Vce(sat) with low switching losses; the representative part MMG600WQ100PD6T7 is a 1000 V/600 A three-level I-NPC module. The series suits efficient power conversion scenarios such as PV inverters and energy-storage inverters.

Chip technology M7i; voltage 1000 V; current 600 A (representative part); topology three-level I-NPC; package GWQ/flat baseplate; VCE(sat) 1.80 V.

• PV inverter
• Energy-storage inverter

The IcyPack series DSC dual-side cooling module adopts a Double Side Cooling structure that markedly improves device current-output efficiency and integrates current and temperature sensors to precisely monitor device safety status. A flagship MacMic product, the series targets high-power-density, high-reliability new-energy and automotive-grade applications.

Structure dual-side cooling (DSC); feature improved current-output efficiency; integrated current sensor and temperature sensor; precise safety monitoring.

• New energy vehicle traction drive
• High-power-density inverter
• Energy-storage system
• Industrial frequency conversion